VCEO=15V / IC=50mA / Ptot=200mW / fT=1.4GHz / (F 2.5dB @ f=200MHz) - (F 5.5dB @ f=800MHz)
BFY90 are silicon planar epitaxial NPN transistor produced using interdigitated base emitter geometry. They are particulary designed for use in wide band common-emitter linear amplifiers up to 1GHz. They feature very high fT, low reverse capacitance, excellent cross modulation properties and very low noise performance. Typical applications include telecommunication and radio communication equipment.
TO-72
| DATASHEET |  |
You can save money on this item when you purchase several at a time. The table below shows the minimum quantities required to benefit from this offer, and how much they'll cost.
| Quantity | Price per unit |
|---|
| 1 | $1.35 |
| 5+ | $1.30 |
| 10+ | $1.25 |
| 25+ | $1.20 |
| 50+ | $1.15 |
